2,924 research outputs found

    N=1 supersymmetric path-integral Poisson-Lie duality

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    We extend the path-integral formulation of Poisson-Lie duality found by Tyurin and von Unge to N=1 supersymmetric sigma-models. Using an explicit representation of the generators of the Drinfel'd double corresponding to GxU(1)^dimG we discuss an application to non-abelian duality. The paper also contains the relevant background and some comments on Poisson-Lie duality.Comment: 23 pages,latex2e,no figures;v2:minor corrections;v3:misprints corrected,final versio

    World-Volume Locally Supersymmetric Born-Infeld Actions

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    We derive manifestly locally supersymmetric extensions of the Born-Infeld action with p=2p=2. The construction is based on a first order bosonic action for DpDp-branes with a generalized Weyl invariance.Comment: LaTeX, 14 pages, typos corrected, references and some remarks adde

    Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes

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    Charge multiplication (CM) in p+^+n epitaxial silicon pad diodes of 75, 100 and 150 \upmum thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of 101610^{16} cm2^{-2} was studied as an option to overcome the strong trapping of charge carriers in the innermost tracking region of future Super-LHC detectors. Charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT) with radiation of different penetration (670, 830, 1060 nm laser light and α\alpha-particles with optional absorbers) were used to locate the CM region close to the p+^+-implantation. The dependence of CM on material, thickness of the epitaxial layer, annealing and temperature was studied. The collected charge in the CM regime was found to be proportional to the deposited charge, uniform over the diode area and stable over a period of several days. Randomly occurring micro discharges at high voltages turned out to be the largest challenge for operation of the diodes in the CM regime. Although at high voltages an increase of the TCT baseline noise was observed, the signal-to-noise ratio was found to improve due to CM for laser light. Possible effects on the charge spectra measured with laser light due to statistical fluctuations in the CM process were not observed. In contrast, the relative width of the spectra increased in the case of α\alpha-particles, probably due to varying charge deposited in the CM region.Comment: 11 pages, accepted by NIM

    Analysis of high quality superconducting resonators: consequences for TLS properties in amorphous oxides

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    1/f1/f noise caused by microscopic Two-Level Systems (TLS) is known to be very detrimental to the performance of superconducting quantum devices but the nature of these TLS is still poorly understood. Recent experiments with superconducting resonators indicates that interaction between TLS in the oxide at the film-substrate interface is not negligible. Here we present data on the loss and 1/f1/f frequency noise from two different Nb resonators with and without Pt capping and discuss what conclusions can be drawn regarding the properties of TLS in amorphous oxides. We also estimate the concentration and dipole moment of the TLS.Comment: 8 pages, 5 figure

    Effects of quasiparticle tunneling in a circuit-QED realization of a strongly driven two-level system

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    We experimentally and theoretically study the frequency shift of a driven cavity coupled to a superconducting charge qubit. In addition to previous studies, we here also consider drive strengths large enough to energetically allow for quasiparticle creation. Quasiparticle tunneling leads to the inclusion of more than two charge states in the dynamics. To explain the observed effects, we develop a master equation for the microwave dressed charge states, including quasiparticle tunneling. A bimodal behavior of the frequency shift as a function of gate voltage can be used for sensitive charge detection. However, at weak drives the charge sensitivity is significantly reduced by non-equilibrium quasiparticles, which induce transitions to a non-sensitive state. Unexpectedly, at high enough drives, quasiparticle tunneling enables a very fast relaxation channel to the sensitive state. In this regime, the charge sensitivity is thus robust against externally injected quasiparticles and the desired dynamics prevail over a broad range of temperatures. We find very good agreement between theory and experiment over a wide range of drive strengths and temperatures.Comment: 25 pages, 7 figure

    PMH56 A PATIENT PERSPECTIVE ON SIDE EFFECTS OF ANTIPSYCHOTIC THERAPY: THE TOOL INSTRUMENT

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    PMH58 TOOL: MULTI-ATTRIBUTE UTILITY FUNCTION REFLECTING PATIENT EXPERIENCE OF SIDE EFFECTS TO ANTIPSYCHOTIC THERAPY

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    Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

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    To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and Co-60 photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1 x 10^{13} 1 MeV equivalent neutrons / cm^2) are well described by empirical formulae for bulk damage. The Co-60 photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO_2-Si interface, a large shift of the flatband voltage and a decrease of the hole mobility.Comment: 33 pages, 25 figures, 3 tables, accepted for publication in NIM

    Near-Field Scanning Microwave Microscopy in the Single Photon Regime

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    The microwave properties of nano-scale structures are important in a wide variety of applications in quantum technology. Here we describe a low-power cryogenic near-field scanning microwave microscope (NSMM) which maintains nano-scale dielectric contrast down to the single microwave photon regime, up to 10910^{9} times lower power than in typical NSMMs. We discuss the remaining challenges towards developing nano-scale NSMM for quantum coherent interaction with two-level systems as an enabling tool for the development of quantum technologies in the microwave regime
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